Ion-beam-induced disordering in single crystals of 6H-SiC and single-crystal films of GaN has been investigated using ion-channeling methods. Amorphization in GaN requires a dose that is about 30 and 100 times higher than in SiC at 180 and 300 K, respectively. Dynamic defect-recovery processes in both materials increase with increasing irradiation temperature. Amorphization in SiC is consistent with a combined direct-impact and defect-stimulated process. Three recovery stages are observed on both the Si and C sublattices under isochronal annealing in Au2?-irradiated 6H-SiC. In GaN, an intermediate saturation state is observed for disordering at the damage peak, which suggests enhanced defect annihilation processes. Implanted Au diffuses towards the surface during implantation at 300 K and undergoes further diffusion into the amorphous surface layer during post-implantation annealing at 870 K.
Revised: November 10, 2005 |
Published: June 4, 2001
Citation
Jiang W., W.J. Weber, and S. Thevuthasan. 2001.Ion Implantation and Thermal Annealing in Silicon Carbide and Gallium Nitride.Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms 178.PNNL-SA-33338.