Epitaxial thin film liftoff using the ion-slicing method has been applied to SrTiO3 single crystals. Rutherford backscattering spectrometry along with channeling (RBS/C) has been used to investigate the relative disorder as a function of temperature from the samples that were irradiated by 40 KeV hydrogen ions to a fluence of 5.0x10 16 H?/cm2. Hydrogen profiles were also measured as a function of annealing temperature to understand the role of hydrogen in the ion slicing process. Film cleavage occurred during or after annealing at 570 K, and cleaved film has been successfully transferred to a silicon substrate using ceramic adhesive.
Revised: May 20, 2004 |
Published: April 25, 2001
Citation
Thevuthasan S., V. Shutthanandan, W. Jiang, and W.J. Weber. 2001.Ion Beam Slicing of Single Crystal Oxide Thin Films. In Ion Beam Synthesis and Processing of Advanced Materials, Materials Research Society Symposium Proceedings, edited by DB Poker, SC Moss, K-H Heinig, 647, O6.2(1-6). Warrendale, Pennsylvania:Materials Research Society.PNNL-SA-34039.