High-quality ceria (CeO2) films were grown on sapphire (Al2O3) (0001) substrates using oxygen plasma-assisted molecular beam epitaxy. The epitaxial orientation of the ceria films has been found to be (100) and (111) at low (
Revised: July 6, 2009 |
Published: May 19, 2009
Citation
Kuchibhatla S.N., P. Nachimuthu, F. Gao, W. Jiang, V. Shutthanandan, M.H. Engelhard, and S. Seal, et al. 2009.Growth-Rate Induced Epitaxial Orientation of CeO2 on Al2O3(0001).Applied Physics Letters 94, no. 20:204101:1-3.PNNL-SA-59456.doi:10.1063/1.3139073