Investigates the epitaxial growth of CeO2 films on three different substrates Si(111), SrTiO3(001) and MgO(001).
Revised: November 10, 2005 |
Published: May 1, 1999
Citation
Kim Y.J., Y. Gao, G.S. Herman, S. Thevuthasan, W. Jiang, D.E. McCready, and S.A. Chambers. 1999.Growth and Structure of Epitaxial CeO2 by Oxygen Plasma-Assisted Molecular Beam Epitaxy.Journal of Vacuum Science and Technology A--Vacuum, Surfaces and Films 17, no. 3:926-935.PNNL-SA-30229.