The epitaxial growth of Ce0.8Sm0.2O1.9 films on sapphire (0001) substrate by oxygen-plasma-assisted MBE has been characterized using RHEED, XPS, XRD, AFM, HRTEM and RBS in order to determine their structure and compositions. The composition of the films was determined to be Ce: Sm: O of 0.8:0.2:1.9 by RBS. The film/substrate epitaxial relationship can be written as CeO2 (111)// ?-Al2O3 (0001) and CeO2 [110]// ?-Al2O3 . The Ce has only 4+ oxidation state in the films and Sm is fully oxidized in the films with formal oxidation of 3+. CeO2 (111) face is preferred orientation and the thin films are cubic phases.
Revised: April 7, 2011 |
Published: January 30, 2008
Citation
Yu Z., S.N. Kuchibhatla, M.H. Engelhard, V. Shutthanandan, C.M. Wang, P. Nachimuthu, and O.A. Marina, et al. 2008.Growth and structure of epitaxial Ce0.8Sm0.2O1.9 by oxygen-plasma-assisted molecular beam epitaxy.Journal of Crystal Growth 310, no. 2008:2450-2456.PNNL-SA-57527.