Using density functional theory, a series of calculations of structural and electronic properties of Si-substituted graphene were conducted. Through substituting C atoms by Si atoms on graphene in the present study, we found that the band gap of graphene can be continuously tuned with differently substitutional concentration. To utilize such substitution-induced band gap changes, we proposed a special design to fabricate graphene-based quantum well device.
Revised: June 7, 2011 |
Published: March 2, 2011
Citation
Zhou Y., P. Yang, Z. Wang, H.Y. Xiao, X.T. Zu, X. Sun, and M.A. Khaleel, et al. 2011.Functionalized Graphene Nanoroads for Quantum Well Device.Applied Physics Letters 98, no. 9:093108.PNNL-SA-77813.doi:10.1063/1.3560981