A commercial bulk chalcogenide glass (Ge28Sb12Se60) was used as a source to fabricate amorphous thin films via thermal evaporation technique. At low frequencies (1 MHz) impedance spectroscopy was performed to measure electrical properties. To measure ac conductivity at microwave frequencies, a split resonance cavity technique was applied for which a model based on parallel arrangement of substrate and film capacitors was developed. This model was used to extract tan8 and ac conductivity of the films. Microwave ac conductivity was correlated with the extrapolated low frequency conductivity data confirming applicability of the universal law commonly observed in amorphous semiconductors.
Revised: February 10, 2012 |
Published: March 22, 2010
Citation
Mirsaneh M., E. Furman, J.V. Ryan, M.T. Lanagan, and C.G. Pantano. 2010.Frequency dependent electrical measurements of amorphous GeSbSe chalcogenide thin films.Applied Physics Letters 96, no. 11:Article No. 112907.PNNL-SA-85359.doi:10.1063/1.3360225