First Step Towards the Growth of Single-Crystal Oxides on Si: Formation of a Two-Dimensional Crystalline Silicate on Si(001)

November 26, 2001

Journal Article

First Step Towards the Growth of Single-Crystal Oxides on Si: Formation of a Two-Dimensional Crystalline Silicate on Si(001)

Abstract

Sr-covered Si(001) surfaces hold promise for providing stable templates for growth of single-crystal oxide films. We have investigated the structural and chemical properties of reconstructed Sr/Si(001) surfaces at different Sr coverages using low energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and scanning tunneling microscopy (STM). Results show that upon low temperature oxidation and subsequent UHV annealing of the Sr/Si(001)-(1x2) surface, a crystalline Sr2SiO4 silicate layer was formed. Using this silicate as a template layer, single-crystal SrO thin films were grown on Si(001) substrates. Our results provided microscopic and spectroscopic evidence of the formation of a uniform, stable, two-dimensional crystalline silicate that can be used for growth of single-crystal oxides on Si(001) substrates.

Revised: November 29, 2001 | Published: November 26, 2001

Citation

Liang Y., S. Gan, and M.H. Engelhard. 2001. First Step Towards the Growth of Single-Crystal Oxides on Si: Formation of a Two-Dimensional Crystalline Silicate on Si(001). Applied Physics Letters 79, no. 22:3591-3593. PNNL-SA-34892.