In this study, porous silicon was fabricated without any chemical etching by self-ion implantation of crystalline Si performed at high temperature and at high fluences. The irradiated silicon samples, which remained crystalline under high temperature ion irradiation, exhibited an increased porous fraction with increasing sample temperature at a given fluence, up to the maximum tested temperature of 650º C. Extremely high ion fluences of at least 2 x 10¹8 ions/cm² were necessary to produce significant void growth. Comparisons between the porous silicon structures and irradiation-induced porous networks in Ge, GaSb, and InSb are made, and differences in the formation conditions for these porous networks are discussed.
Revised: October 31, 2011 |
Published: March 15, 2011
Citation
Perez-Bergquist A.G., F.U. Naab, Y. Zhang, and L.M. Wang. 2011.Etch-free Formation of Porous Silicon by High-energy Ion Irradiation.Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms 269, no. 6:561-565. doi:10.1016/j.nimb.2011.01.009