Epitaxial Growth and Properties of Cobalt-doped ZnO on a-Al2O3 Single-Crystal Substrates

August 30, 2004

Journal Article

Epitaxial Growth and Properties of Cobalt-doped ZnO on a-Al2O3 Single-Crystal Substrates

Abstract

Co-doped ZnO (CoxZn1-xO) is of potential interest for spintronics due to the prediction of room-temperature ferromagnetism. We have grown epitaxial CoxZn1-xO films on Al2O3(012) substrates by metalorganic chemical vapor deposition using a liquid precursor delivery system. High concentrations of Co (x

Revised: July 13, 2011 | Published: August 30, 2004

Citation

Tuan A.C., J.D. Bryan, A. Pakhomov, V. Shutthanandan, S. Thevuthasan, D.E. McCready, and D.J. Gaspar, et al. 2004. Epitaxial Growth and Properties of Cobalt-doped ZnO on a-Al2O3 Single-Crystal Substrates. Physical Review. B, Condensed Matter 70, no. 5:054424. PNNL-SA-38883.