We have prepared and investigated the structural, compositional, morphological and photochemical properties of N-doped TiO2(110), (100) and (001) epitaxial films grown by means of plasma-assisted molecular beam epitaxy. The N solid solubility is limited to ~ 1 at. % of the total anions in the lattice in films where excellent long-range structural order is maintained throughout growth. The photochemical activity of the resulting surfaces was evaluated using hole-mediated decomposition of adsorbed trimethyl acetate. Undoped surfaces of the three orientations exhibited comparable photochemical activities. However, the dependence of the photochemical activity on N concentration shows a marked crystallographic dependence. The results are rationalized in terms of the apparent crystallographic anisotropy of hole mobility as well as hole trapping and detrapping probabilities.
Revised: May 25, 2010 |
Published: April 15, 2010
Citation
Ohsawa T., M.A. Henderson, and S.A. Chambers. 2010.Epitaxial Growth and Orientational Dependence of Surface Photochemistry in CrystallineTiO2 Rutile Films Doped with Nitrogen.Journal of Physical Chemistry C 114, no. 14:6595-6601.PNNL-SA-70404.doi:10.1021/jp1002726