April 15, 2010
Journal Article

Epitaxial Growth and Orientational Dependence of Surface Photochemistry in CrystallineTiO2 Rutile Films Doped with Nitrogen

Abstract

We have prepared and investigated the structural, compositional, morphological and photochemical properties of N-doped TiO2(110), (100) and (001) epitaxial films grown by means of plasma-assisted molecular beam epitaxy. The N solid solubility is limited to ~ 1 at. % of the total anions in the lattice in films where excellent long-range structural order is maintained throughout growth. The photochemical activity of the resulting surfaces was evaluated using hole-mediated decomposition of adsorbed trimethyl acetate. Undoped surfaces of the three orientations exhibited comparable photochemical activities. However, the dependence of the photochemical activity on N concentration shows a marked crystallographic dependence. The results are rationalized in terms of the apparent crystallographic anisotropy of hole mobility as well as hole trapping and detrapping probabilities.

Revised: May 25, 2010 | Published: April 15, 2010

Citation

Ohsawa T., M.A. Henderson, and S.A. Chambers. 2010. Epitaxial Growth and Orientational Dependence of Surface Photochemistry in CrystallineTiO2 Rutile Films Doped with Nitrogen. Journal of Physical Chemistry C 114, no. 14:6595-6601. PNNL-SA-70404. doi:10.1021/jp1002726