Epitaxial Cr metallizations grown on n-SrTiO3(001) by molecular beam epitaxy are shown to result in an ordered interface with Cr bound to O in the terminal TiO2 layer, no reduction of the SrTiO3, and a near-perfect Ohmic contact. Cr/n-SrTiO3(001) thus constitutes an ideal interface between a pure metal and wide gap oxide in which interface redox chemistry does not occur, and the Fermi level remains unpinned.
Revised: March 16, 2012 |
Published: January 30, 2012
Citation
Capan C., G. Sun, M.E. Bowden, and S.A. Chambers. 2012.Epitaxial Cr on n-SrTiO3(001)—An ideal Ohmic contact.Applied Physics Letters 100, no. 5:052106.PNNL-SA-83506.doi:10.1063/1.3680608