PNNL

Abstract

Semiconductor nanostructures have attracted widespread attention for their unique quantum-confined nanoscale properties. In particular, the luminescence properties of nanoscale semiconductors are seen as a key to the future of optoelectronic microdevice fabrication. Although numerous techniques exist for the formation and modification of nanostructures on material surfaces, fabrication of such structures embedded within the material have proved elusive. In this work, we present the formation of embedded nanofiber layers within GaSb by high energy Au+ ion irradiation, and we analyze the distinct regions of the fiber layers formed as a result. Using growth models for low energy ions, a modified growth model is presented to interpret the presence of these observed fiber regimes. Furthermore, methods for tailoring the relative sizes of the fiber layers are presented. An additional model is proposed to account for the removal of the surface layer at increasing ion fluence.