PNNL

Abstract

Silicon carbide (SiC) is a wide-band gap semiconductor that has attracted extensive investigations for a wide range of device applications and structural components in harsh nuclear environments. Accurate knowledge of stopping powers in SiC, especially for B, N and Al ion for doping purposes and He ions for ion-beam analysis applications, is highly desirable. In the present study, the electronic energy loss of these ions in a self-supported SiC foil is directly measured in transmission geometry using a ToF ERDA set-up over the energy region of interest. The measured electronic stopping powers are parameterized for easily implementation in any other applications, and compared with the predictions of the SRIM (Stopping and Range of Ions in Matter) code.