ZnO epitaxial films grown by pulsed laser deposition in an ambient of H2 or D2 exhibit qualitatively different electronic properties compared to films grown in vacuum or O2, or bulk single crystals annealed in H2. These include temperature-independent resistivities of ~0.1 ?-cm, carrier (electron) concentrations in the 1018 cm-3 range, mobilities of 20-40 cm2/V-sec, and negligible (a few meV) activation energies for conduction. These transport properties are consistent with H (D) forming an ultra-shallow donor or conduction band states not achievable by post-growth annealing in H2.
Revised: August 18, 2014 |
Published: April 14, 2008
Citation
Li Y., T.C. Kaspar, T.C. Droubay, Z. Zhu, V. Shutthanandan, P. Nachimuthu, and S.A. Chambers. 2008.Electronic properties of H and D doped ZnO epitaxial films.Applied Physics Letters 92, no. 15:Art. No. 152105.PNNL-SA-59567.