MRS Proc. Vol. 537 There is no abstract currently available for this item
Revised: September 26, 2002 |
Published: September 15, 1999
Citation
Jiang W., W.J. Weber, S. Thevuthasan, G.J. Exarhos, and B.J. Bozlee. 1999.Effect of Oxygen Ion Implantation in Gallium Nitride. In GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A., edited by S.J. Pearton, C. Kuo, A.F. Wright, and T. Uenoyama, 537, 6.15.1 - 6.15.6. Warrendale, Pennsylvania:Materials Research Society.PNNL-SA-30627.