A single crystal gallium nitride film on sapphire was successively irradiated to a fluence of 4.5 Au3+/nm2 in different areas at varied temperatures ranging from 150 to 800 K. The temperature dependence of disorder on both the Ga and N sublattices has been investigated using a 3.736 MeV He+ backscattering analysis along the - and -axial channeling directions. Significant dynamic recovery of disorder occurs over the applied temperature range. There is a higher degree of disorder on the N sublattice observed along the axis. Some of the defects produced during the irradiation in GaN are effectively shielded by the axis.
Revised: March 8, 2006 |
Published: January 1, 2006
Citation
Jiang W., and W.J. Weber. 2006.Effect of irradiation temperature on dynamic recovery in gallium nitride.Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms 242, no. 1-2:431-433.PNNL-SA-42525.