Gallium nitride single crystals were irradiated using energetic Au2? ions to two fluences at room temperature. Two different damage levels and depth profiles that are characterized by near-surface damage accumulation and deeper-regime damage saturation were produced. Thermal annealing at 873 K resulted in disorder recovery only in the near-surface region at low fluence. However, simultaneous irradiation with 5.4 MeV Si2? ions during annealing at 873 K induced significant recovery over the entire damage profile at both low and high fluences. Results from high-resolution transmission electron microscopy show recovery of the crystal structure in the highly disordered surface regime following the Si2? ion irradiation. The irradiation-assisted recovery is primarily attributed to defect-stimulated recovery and epitaxial recrystallization processes due to the creation of mobile Frenkel pairs.
Revised: May 27, 2004 |
Published: April 5, 2004
Citation
Jiang W., W.J. Weber, L.M. Wang, and K. Sun. 2004.Dynamic Recovery in Au Ion Irradiated Gallium Nitride. In Radiation Effects and Ion Beam Processing of Materials, Materials Research Society Symposium Proceedings held December 1-5, 2003, Boston, Massachusetts, edited by LM Wang, R Fromknecht, LL Snead, DF Downey and H Takahashi, 792, 285-290, Paper R5.5. Warrendale, Pennsylvania:Materials Research Society.PNNL-SA-40115.