Single crystal 6H-SiC wafers were irradiated at 300 K with 50 keV He? ions to fluences ranging from 7.5 to 250 He?/nm2. Ion-channeling experiments with 2.0 MeV He? Rutherford backscattering spectrometry (RBS) were performed to determine the depth profile of Si disorder. The measured profiles are consistent with SRIM-97 simulations at and below 45 He?/nm2, but remarkably higher than the SRIM-97 prediction at both 100 and 150 He?/nm2. Cross-sectional transmission electron microscopy (XTEM) study indicates a homogeneous-amorphization process in the material under the irradiation conditions. Results from elastic recoil detection analysis (ERDA) suggest that the implanted He atoms diffuse in a high-damage regime toward the surface.
Revised: May 20, 2004 |
Published: February 12, 2002
Citation
Jiang W., W.J. Weber, C.M. Wang, and Y. Zhang. 2002.Disordering Behavior and Helium Diffusion in He? Irradiated 6H-SiC.Journal of Materials Research 17, no. 2:271-274.PNNL-SA-35429.