A single crystal 6H-SiC wafer was sequentially implanted in two areas at 873 and 295 K using 2.0 MeV Au2? ions under off-axis conditions. Identical Au profiles, as a function of atomic areal density, were produced at 873 and 295 K. The linear expansion in the amorphous state produced at 295 K was measured relative to the slightly damaged state produced at 873 K, using the Au profiles as references. The red-shift of the plasmon-loss peak was also used to directly measure the local density changes. Based on these measurements, the volume expansion of the amorphous state in 6H-SiC at 295 K is 11.5?1.9%, while that in the slightly damaged state at 873 is 0.9%.
Revised: June 29, 2011 |
Published: May 1, 2004
Citation
Jiang W., C.M. Wang, W.J. Weber, M.H. Engelhard, and L.V. Saraf. 2004.Direct Determination of Volume Changes in Ion-Beam-Irradiated SiC.Journal of Applied Physics 95, no. 9:4687-4690.PNNL-SA-38529.