March 22, 2000
Journal Article

Deuterium Channeling Analysis for He(+)-Implanted 6H-SiC

Abstract

Deuterium ion channeling is applied to study accumulated disorder on Si and C sublattices in 6H-SiC crystals irradiated with 50 keV He(+) ions at 100 and 300 K. The relative disorder on both sublattices follows sigmoidal dependence on dose. Carbon disorder is higher at low doses, suggesting a smaller C displacement energy. Isochronal annealing data show that the recovery behavior on the Si and C sublattices is similar. Annealing of a buried amorphous SiC layer, produced at 100 K, exhibits an epitaxial growth rate of ~0.154 nm/K in the temperature range from 370 to 870 K.

Revised: April 13, 2000 | Published: March 22, 2000

Citation

Jiang W., S. Thevuthasan, W.J. Weber, and R. Grotzschel. 2000. Deuterium Channeling Analysis for He(+)-Implanted 6H-SiC. Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms 161-163. PNNL-SA-31548.