DC ionization conductivity measurements were used to characterize the electrical response of amorphous semi-conductors to ionizing radiation. Two different glass systems were examined: a chalcopyrite glass (CdGexAs2; for x = 0.45-1.0) with a tetrahedrally coordinated structure and a chalcogenide glass (As40Se(60-x)Tex; where x = 0-12), with a layered or three dimensionally networked structure, depending on Te content. Changes in DC ionization current were measured as a function of the type of radiation (a or ?), dose rate, applied bias voltage, specimen thickness and temperature. These results demonstrate the potential of these materials for radiation detection applications.
Revised: August 30, 2010 |
Published: June 1, 2009
Citation
Johnson B.R., J.V. Crum, S.K. Sundaram, R.M. Van Ginhoven, C.E. Seifert, B.J. Riley, and J.V. Ryan. 2009.DC Ionization Conductivity of Amorphous Semiconductors for Radiation Detection Applications.IEEE Transactions on Nuclear Science 56, no. 3, PT. 2:863-868.PNNL-SA-61380.