We have used oxygen-plasma-assisted molecular beam epitaxy (OPA-MBE) to grow highly oriented Ce1-xSmxO2-d films on single crystal c-Al2O3. The samarium concentration, x, was varied in the range 1-33 atom%. It was observed that dominant (111) orientation in Ce1-xSmxO2-d films can be maintained up to about 10 samarium atom% concentration. Films higher than 10 atom% Sm concentration started to show polycrystalline features. The highest conductivity of 0.04 S.cm-1, at 600 0C, was observed for films with ~ 5 atom% Sm concentration. A loss of orientation, triggering an enhanced grain boundary scattering, appears to be responsible for the decrease in conductivity at higher dopant concentrations.
Revised: December 13, 2008 |
Published: March 11, 2008
Citation
Yu Z., S.N. Kuchibhatla, L.V. Saraf, O.A. Marina, C.M. Wang, M.H. Engelhard, and V. Shutthanandan, et al. 2008.Conductivity of Oriented Samaria-Doped Ceria Thin Films Grown by Oxygen-plasma-assisted Molecular Beam Epitaxy.Electrochemical and Solid-State Letters 11, no. 5:B76-B78.PNNL-SA-58775.doi:10.1149/1.2890122