Precise cleaving of oxide films with known thickness using hydrogen implantation and subsequent annealing was investigated using strontium titanate (SrTiO3) as a model material. Rutherford backscattering in channeling geometry (RBS/C), nuclear reaction analysis (NRA), and scanning electron microscopy (SEM) have been used to characterize this process.
Revised: September 21, 2011 |
Published: July 2, 2001
Citation
Thevuthasan S., W. Jiang, and W.J. Weber. 2001.Cleaving Oxide Films Using Hydrogen Implantation.Materials Letters 49, no. 6:313-317.PNNL-SA-32837.