This paper reports on our recent experimental results for ion-irradiated Ba-doped CsAlSi2O6 pollucite. A number of fundamental issues related to amorphization of the material are addressed, including critical temperature for amorphization and threshold density of electronic energy deposition for amorphization. In addition, Ba-containing precipitate in the pollucite has been identified, which is found to be more resistant to ion-irradiation-induced amorphization than pollucite.
Revised: July 25, 2020 |
Published: December 31, 2013
Citation
Jiang W., L. Kovarik, and T.M. Nenoff. 2013.Chemical and Charge Imbalance Induced by Radionuclide Decay: Effects on Waste Form Structure. In Separations and Waste Forms Research and Development FY 2013 Accomplishments Report. 122-127. Idaho Falls, Idaho:Idaho National Laboratory.PNNL-SA-99685.