The thermal generation of defects on single rystal CeO2(001) was studied with mass-spectroscopy of recoiled ions. It was found that cerium and oxygen intensities were significantly reduce after annealing the surface to temperatures as low as 373 K.
Revised: September 16, 1999 |
Published: August 20, 1999
Citation
Herman G.S. 1999.Characterization of Surface Defects on Epitaxial CeO2(001) films.Surface Science 437, no. 1-2:207-214.PNNL-SA-30720.