Band discontinuities and band bending at the epitaxial SrTiO3/GaAs(001) interface were investigated using x-ray and ultraviolet photoelectron spectroscopy. Results showed that the epitaxial SrTiO3/GaAs(001) formed a type-II heterojuntion and valence band offsets being 0.6 eV and 2.5 eV, respectively, for both n- and p-GaAs(001) substrates. The photoemission results further revealed that Fermi level was unpinned at the epitaxial SrTiO3/GaAs(001) interface.
Revised: June 9, 2005 |
Published: February 21, 2005
Citation
Liang Y., J.A. Curless, and D.E. McCready. 2005.Band Alignment at Epitaxial SrTiO3-GaAs(001) Heterojunction.Applied Physics Letters 86, no. 8:Article no: 082905.PNNL-SA-44078.