PNNL

Abstract

Atom probe tomography (APT) is a mass spectrometry based on time-of-flight measurements which also concurrently produces 3D spatial information. The reader is referred to any of the other papers in this volume or to the following references for further information 4–8. The current capabilities of APT, such as detecting a low number of dopant atoms in nanoscale devices or segregation at a nanoparticle interface, make this technique an important component in the nanoscale metrology toolbox. In this manuscript, we review some of the applications of APT to nanoscale electronic materials, including transistors and finFETs, silicide contact microstructures, nanowires, and nanoparticles.