APT AND TEM CHARACTERIZATIONS OF PRECIPITATES IN Mg+ ION IMPLANTED CUBIC SILICON CARBIDE

March 1, 2016

Book Chapter

APT AND TEM CHARACTERIZATIONS OF PRECIPITATES IN Mg+ ION IMPLANTED CUBIC SILICON CARBIDE

Abstract

This study aims to characterize precipitates and defect structures in Mg+ ion implanted and high-temperature annealed cubic silicon carbide (3C-SiC).

Revised: July 25, 2020 | Published: March 1, 2016

Citation

Jiang W., J. Liu, D.K. Schreiber, D.J. Edwards, C.H. Henager, R.J. Kurtz, and Y. Wang. 2016. APT AND TEM CHARACTERIZATIONS OF PRECIPITATES IN Mg+ ION IMPLANTED CUBIC SILICON CARBIDE. In Fusion Materials Semiannual Progress Report for the Period Ending December 31, 2015, edited by Clark, D. 79-84. DOE-ER-0313/59. Oak Ridge, Tennessee:OAK RIDGE NATIONAL LABORATORY. PNNL-SA-116093.