We report the XPS characterization of a thin film of Al2O3 (35 nm) deposited via e-beam evaporation onto silicon (100). The film was characterized with monochromatic Al Ka radiation. An XPS survey scan, an Al 2p narrow scan, and the valence band spectrum were collected. The Al2O3 thin film is used as a diffusion barrier layer for templated carbon nanotube (CNT) growth in the preparation of microfabricated thin layer chromatography plates.
Revised: November 25, 2013 |
Published: September 25, 2013
Citation
Madaan N., S.S. Kanyal, D.S. Jensen, M.A. Vail, A. Dadson, M.H. Engelhard, and H. Samha, et al. 2013.Al2O3 e-Beam Evaporated onto Silicon (100)/SiO2, by XPS.Surface Science Spectra 20, no. 1:43-48.PNNL-SA-92127.doi:10.1116/11.20121102